Rapid calibration of bits weights error for high-resolution successive approximation register ADC

Lu Liu, Daiguo Xu, Shiliu Xu
{"title":"Rapid calibration of bits weights error for high-resolution successive approximation register ADC","authors":"Lu Liu, Daiguo Xu, Shiliu Xu","doi":"10.1049/IET-CDS.2018.5220","DOIUrl":null,"url":null,"abstract":"This study presents the rapid calibration of bits weights error for an 18 bit successive approximation register analogue-to-digital converter (ADC). This calibration technique is a new hybrid algorithm. Comparing to the traditional methods, this technique significantly reduces the convergence time and improves the accuracy of bits weights error estimation. There is no wasteful time in the correction process. This proposed approach estimates the bits weights error not only from the digital-to-analogue converter capacitor mismatch, inter-stage gain error, but also the metal insulator metal (MIM), capacitor second-order voltage coefficient in the ultra-high-resolution ADC. The proposed algorithm has been verified with a test 18 bit ADC chip, where measured results show the calibration is able to improve the peak integral nonlinearity (INL), of the ADC from 29 to 1.0 LSB after calibration. Measured results also show the signal-to-noise and distortion ratio/spurious-free dynamic range of the ADC improves from 83/94 to 96/127 dB after calibration. It will be seen that the calibration is achieved in ∼4k cycles, which is more than ×25 faster than previously published algorithm.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IET-CDS.2018.5220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This study presents the rapid calibration of bits weights error for an 18 bit successive approximation register analogue-to-digital converter (ADC). This calibration technique is a new hybrid algorithm. Comparing to the traditional methods, this technique significantly reduces the convergence time and improves the accuracy of bits weights error estimation. There is no wasteful time in the correction process. This proposed approach estimates the bits weights error not only from the digital-to-analogue converter capacitor mismatch, inter-stage gain error, but also the metal insulator metal (MIM), capacitor second-order voltage coefficient in the ultra-high-resolution ADC. The proposed algorithm has been verified with a test 18 bit ADC chip, where measured results show the calibration is able to improve the peak integral nonlinearity (INL), of the ADC from 29 to 1.0 LSB after calibration. Measured results also show the signal-to-noise and distortion ratio/spurious-free dynamic range of the ADC improves from 83/94 to 96/127 dB after calibration. It will be seen that the calibration is achieved in ∼4k cycles, which is more than ×25 faster than previously published algorithm.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高分辨率逐次逼近寄存器ADC位权误差的快速校正
本研究提出了一个18位连续逼近寄存器模数转换器(ADC)的位权重误差的快速校准方法。该标定技术是一种新的混合算法。与传统方法相比,该方法显著缩短了收敛时间,提高了码权误差估计的精度。在校正过程中不会浪费时间。该方法不仅可以从数模转换器电容失配、级间增益误差,还可以从超高分辨率ADC的金属绝缘体(MIM)、电容二阶电压系数等方面估计位权误差。该算法已在一个18位ADC测试芯片上得到验证,测量结果表明,校正后的ADC的峰值积分非线性(INL)从29提高到1.0 LSB。测量结果还表明,校正后的ADC的信噪比和失真比/无杂散动态范围从83/94提高到96/127 dB。可以看到,校准在~ 4k周期内实现,比以前发表的算法快×25多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A low-offset low-power and high-speed dynamic latch comparator with a preamplifier-enhanced stage Embedding delay-based physical unclonable functions in networks-on-chip Design of 10T SRAM cell with improved read performance and expanded write margin On the applicability of two-bit carbon nanotube through-silicon via for power distribution networks in 3-D integrated circuits Analytical model and simulation-based analysis of a work function engineered triple metal tunnel field-effect transistor device showing excellent device performance
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1