Universal description of hot-carrier-induced interface states in NMOSFETs

Abstract

In NMOSFETs, hot-carrier-induced damage primarily consists of interface states. We present a new model to predict interface state formation over the full gate voltage range. To this end we add an empirical oxide-field dependence to the "lucky-electron" model. Furthermore, we establish the relation between interface states and the degradation of transistor parameters. We checked both new models experimentally with many degradation experiments (including charge pumping) at various stress voltages on NMOSFETs of 0.2-2.0 mu m gate length and 5.5-25 nm oxide thickness with either conventional drain or LDD.<>