Short line electromigration characteristics and their applications for circuit design

Baozhen Li, C. Christiansen, C. Burke, N. Hogle, D. Badami
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引用次数: 9

Abstract

Technology scaling has led to severe electromigration degradation for advanced interconnects. Taking full advantage of the Blech effect benefit has become more and more important for circuit design to overcome this EM performance degradation. Due to the wide range of circuit design layout variations, understanding the EM characteristics of the short lines closely related to the real circuit and chip design applications is needed. In this study, EM characteristics of a wide range of different short line structures are investigated. These structures include simple short line segments, short line segments with branches and with passive passing lines on top, and long lines with only a short portion carrying current. Implications of these results to circuit and chip design are also discussed.
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短线电迁移特性及其在电路设计中的应用
技术规模化导致了高级互连的严重电迁移退化。在电路设计中,充分利用Blech效应的优势来克服这种电磁性能下降变得越来越重要。由于电路设计布局的变化范围很广,因此需要了解与实际电路和芯片设计应用密切相关的短线的电磁特性。在这项研究中,研究了大范围不同短线结构的电磁特性。这些结构包括简单的短线段,带分支的短线段和顶部有无源通过线,以及只有短部分携带电流的长线段。这些结果对电路和芯片设计的意义也进行了讨论。
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Resistor-less power-rail ESD clamp circuit with ultra-low leakage current in 65nm CMOS process An age-aware library for reliability simulation of digital ICs Intrinsic study of current crowding and current density gradient effects on electromigration in BEOL copper interconnects Foundations for oxide breakdown compact modeling towards circuit-level simulations Making reliable memories in an unreliable world (invited)
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