Modulator Design for THz Communication Based on Vanadium Dioxide Metasurface

Yaojia Chi, Ningyuan Kuang, Yahua Tang, Wenjie Chen, Xinying Ma, Zhuoxun Li, Q. Wen, Zhi Chen
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引用次数: 3

Abstract

With the continuous development of modern information society, all kinds of high-speed wireless communication application are emerging, while the traditional spectrum resources are becoming scarce.The terahertz (THz) band is an enabler for wireless communication (Beyond 5G) since the excellent characteristics of terahertz communication. It is extremely challenging to design the modulator for THz communications.In this paper, an electrically controlled THz metasurface was designed and fabricated based on the phase transition characteristic of Vanadium Dioxide (VO2). It can switch between two resonant states with a large difference in transmittance. The experimental results show that the transmittance of perpendicular incident THz wave reaches to the highest at 0.31 THz. When the applied voltage is increased from 0 V to 8 V, the transmittance significantly decreases to the lowest value at 0.41 THz. The modulation depth can be up to 59% in the entire band of 0.2-0.6 THz. This work is of great significance for the research and development of THz modulators.
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基于二氧化钒超表面的太赫兹通信调制器设计
随着现代信息社会的不断发展,各种高速无线通信应用层出不穷,而传统的频谱资源却越来越稀缺。太赫兹(THz)频段是无线通信(超越5G)的推动者,因为太赫兹通信具有优异的特性。太赫兹通信调制器的设计极具挑战性。本文基于二氧化钒(VO2)的相变特性,设计并制备了电控太赫兹超表面。它可以在两种共振状态之间切换,透射率差异很大。实验结果表明,垂直入射太赫兹波的透过率在0.31太赫兹处达到最高。当施加电压从0 V增加到8 V时,透射率显著降低,在0.41 THz处达到最低点。在0.2 ~ 0.6 THz的全频段内,调制深度可达59%。这项工作对太赫兹调制器的研究和开发具有重要意义。
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