MOS Dosimeter Based on Ge Nanocrystals in Hfo2

C. Palade, A. Slav, A. Lepadatu, I. Stavarache, I. Dascalescu, O. Cojocaru, T. Stoica, M. Ciurea, S. Lazanu
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Abstract

Trilayer MOS capacitors gate HfO2 / floating gate of Ge nanocrystals in HfO2 / tunnel HfO2 / Si substrate were prepared in the aim to be used for the detection of ionizing radiation. Magnetron sputtering and rapid thermal annealing were used for their fabrication. Capacitance-voltage measurements showed that Ge nanocrystals are the most important charge storage centres in our structure. The possibility to use these trilayer MOS capacitors as dosimeters was investigated, and the sensitivity to a particle irradiation was extracted.
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基于Hfo2中Ge纳米晶体的MOS剂量计
在HfO2 /隧道HfO2 / Si衬底上制备了三层MOS栅极HfO2 / Ge纳米晶浮栅,用于电离辐射检测。采用磁控溅射和快速热退火技术制备。电容电压测量表明,锗纳米晶体是我们结构中最重要的电荷存储中心。研究了这些三层MOS电容器用作剂量计的可能性,并提取了其对粒子辐照的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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