{"title":"Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method","authors":"C. Moglestue","doi":"10.1049/IJ-SSED:19790028","DOIUrl":null,"url":null,"abstract":"The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":" 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19790028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.
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