Critical electron-hole processes in dielectric induced by synchronous action of high electric field and high-current-density electron beam

D. Vaisburd
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Abstract

Injection of high-current-density (HCD) electron beam of nanosecond pulse duration into a dielectric creates strong electric field, from one side, and high density of electrons and holes trapped at the shallow levels in the band-gap, from the other side. Two types of high intensity electron emission from dielectric into vacuum are studied experimentally and considered theoretically. The first one is field electron emission from dielectric (FEED), which arises owing to intense detrapping electrons from shallow levels in high electric field. The second one is critical electron emission from dielectric (CEED), which arises when FEED current density exceeds critical value and induced point explosions of the microtips on the dielectric surface and ejects atom-ion plasmas from this points into vacuum. Full theoretical and computer simulation of FEED and CEED needs to take into account a lot of ultrafast excitation/relaxation processes in dielectric under HCD electron beam irradiation.
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高电场和高电流密度电子束同步作用下介电介质中的临界电子空穴过程
将脉冲持续时间为纳秒的高电流密度(HCD)电子束注入电介质,从一侧产生强电场,从另一侧产生被困在带隙浅层的高密度电子和空穴。本文从实验和理论上研究了两种介质向真空的高强度电子发射。第一种是介质场电子发射(FEED),这是由于在高电场作用下,电子从浅层强脱陷而产生的。二是介电介质临界电子发射(CEED),当FEED电流密度超过临界值时,介电介质表面微针尖发生点爆炸,原子离子等离子体从该点喷射到真空中。对FEED和CEED进行全面的理论和计算机模拟,需要考虑到HCD电子束辐照下介电介质中大量的超快激发/弛豫过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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