Haihong Qin, Bin Zhao, W. Xu, Jiaopu Wen, Yangguang Yan
{"title":"Evaluation of performance improvement of Silicon Carbide MOSFETs based DC-DC converter","authors":"Haihong Qin, Bin Zhao, W. Xu, Jiaopu Wen, Yangguang Yan","doi":"10.1109/IPEMC.2012.6258972","DOIUrl":null,"url":null,"abstract":"Recently, the SiC device technology is rapidly progressed. And SiC device is known by its outstanding property, such as lower on-resistance and short switching time. Especially, the SiC MOSFETs are finding their niche in the kilovolt range, which is currently dominated by Si IGBTs. However, the performance improvement of a power conversion circuit has not been clearly shown. A two-transistor converter will be built and the power losses of SiC and Si MOSFET based converter for 50 kHz switching frequency will be evaluated and compared. And higher switching frequency operation of SiC MOSFET based converter will also be observed. These questions will be explored for the class of high-frequency, hard-switched converters with input voltage up to about 600VDC and power throughput in the kilowatt range. The isolated gate driver of the SiC MOSFET is shown.","PeriodicalId":236136,"journal":{"name":"Proceedings of The 7th International Power Electronics and Motion Control Conference","volume":"85 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of The 7th International Power Electronics and Motion Control Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEMC.2012.6258972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Recently, the SiC device technology is rapidly progressed. And SiC device is known by its outstanding property, such as lower on-resistance and short switching time. Especially, the SiC MOSFETs are finding their niche in the kilovolt range, which is currently dominated by Si IGBTs. However, the performance improvement of a power conversion circuit has not been clearly shown. A two-transistor converter will be built and the power losses of SiC and Si MOSFET based converter for 50 kHz switching frequency will be evaluated and compared. And higher switching frequency operation of SiC MOSFET based converter will also be observed. These questions will be explored for the class of high-frequency, hard-switched converters with input voltage up to about 600VDC and power throughput in the kilowatt range. The isolated gate driver of the SiC MOSFET is shown.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
