Degradation of silicon AC-coupled microstrip detectors induced by radiation damage

IEEE Conference on Nuclear Science Symposium and Medical Imaging Pub Date : 1992-10-25 DOI:10.1109/NSSMIC.1992.301436

N. Bacchetta, D. Bisello, Y. Gotra, A. Paccagnella, G. Verzellesi, C. Canali, P. Fuochi

{"title":"Degradation of silicon AC-coupled microstrip detectors induced by radiation damage","authors":"N. Bacchetta, D. Bisello, Y. Gotra, A. Paccagnella, G. Verzellesi, C. Canali, P. Fuochi","doi":"10.1109/NSSMIC.1992.301436","DOIUrl":null,"url":null,"abstract":"Results are presented showing the radiation response of FOXFET (field-oxide field effect transistor) biased AC-coupled microstrip detectors and related test patterns to be used in the CDF microvertex detector. The radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation induced variations of the DC electrical parameters have been analyzed. The long-term post-irradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been considered. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase of the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease. No radiation-induced variation of the strip self bias Vso is measured up to 1 Mrad. The above variations are due to the generation of Si/SiO/sub 2/ interface traps and positive charge accumulation in the oxide film, as confirmed by C-V measurements on MOS capacitors.<<ETX>>","PeriodicalId":447239,"journal":{"name":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","volume":"93 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1992.301436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

Abstract

Results are presented showing the radiation response of FOXFET (field-oxide field effect transistor) biased AC-coupled microstrip detectors and related test patterns to be used in the CDF microvertex detector. The radiation tolerance of detectors to gamma and proton irradiation has been tested, and the radiation induced variations of the DC electrical parameters have been analyzed. The long-term post-irradiation behavior of detector characteristics has been studied, and the relevant room-temperature annealing phenomena have been considered. The main radiation damage effects after gamma or proton irradiation of FOXFET biased microstrip detectors consist of an increase of the total leakage current, while both the detector dynamic resistance and FOXFET switching voltage decrease. No radiation-induced variation of the strip self bias Vso is measured up to 1 Mrad. The above variations are due to the generation of Si/SiO/sub 2/ interface traps and positive charge accumulation in the oxide film, as confirmed by C-V measurements on MOS capacitors.<>

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

辐射损伤引起硅交流耦合微带探测器的退化

给出了fofet(场氧化场效应晶体管)偏置交流耦合微带探测器的辐射响应和用于CDF微顶点探测器的相关测试图。测试了探测器对γ和质子辐照的辐射耐受性，分析了探测器直流电参数的辐射诱导变化。研究了探测器特性的长期辐照后行为，并考虑了相关的室温退火现象。伽曼或质子辐照后，fofet偏置微带探测器的主要辐射损伤效应是总泄漏电流增加，而探测器的动态电阻和开关电压均降低。在1 Mrad以内，测量到无辐射诱导的条带自偏置Vso变化。上述变化是由于产生Si/SiO/sub - 2/界面陷阱和氧化膜中的正电荷积累，正如在MOS电容器上的C-V测量所证实的那样。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

IEEE Conference on Nuclear Science Symposium and Medical Imaging

自引率

0.00%

发文量

期刊最新文献

Results in online data processing in the data acquisition system of the ALEPH TPC Practical evaluation of several cone beam orbits for SPECT Model based scatter correction in three dimensions (positron emission tomography) Macintosh software for simulating resolution and scatter effects in PET Testing fast ADC's at sample rates between 20 and 140 MSPS