Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053745
N. Hossain, S. Jin, S. Sweeney, S. Liebich, P. Ludewig, M. Zimprich, K. Volz, B. Kunert, W. Stolz
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引用次数: 3

Abstract

This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm−2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.
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硅上单片集成Ga(NAsP)/(BGa)P QW激光器的物理特性
本文报道了利用新型(BGa)P应变补偿层在(001)硅衬底上实现了新型直接带隙稀氮化镓(NAsP) QW激光器的晶格匹配单片集成。激光工作高达165K，阈值电流密度为1.6kAcm−2,SQW器件的特征温度为73K，这是朝着硅衬底上长期稳定激光二极管单片集成的商业解决方案迈出的积极一步。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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8th IEEE International Conference on Group IV Photonics
8th IEEE International Conference on Group IV Photonics
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