Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim
{"title":"Effect of CdS annealing in (CdCl/sub 2/+CdS) atmosphere on CdTe cells","authors":"Sung Chan Park, B. Han, J. Ahn, B. Ahn, Donghwan Kim","doi":"10.1109/PVSC.1997.654145","DOIUrl":null,"url":null,"abstract":"To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"254 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
To increase grain size, solution-grown CdS films were annealed at 560/spl deg/C in a (CdCl/sub 2/+CdS) atmosphere, instead of CdCl/sub 2/ only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E/sub g/, compared to that of CdS films annealed at 400/spl deg/C for 30 min in H/sub 2/. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl/sub 2/+CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.