{"title":"Design of LNA for C band applications","authors":"M. Iyer, T. Shanmuganantham","doi":"10.1109/ICCS1.2017.8325992","DOIUrl":null,"url":null,"abstract":"Amplification is one of the most vital operation in modern RF and microwave communication systems. Earlier microwave amplifiers were made of tubes like klystron, TWT's etc. but due to the development of solid state device technology now-a-days the microwave amplifiers are often designed using these devices like BJT's, FET's and newly developed heterojunction devices like HBT's and HEMT's. At the receiver of a communication system the first element being an antenna receives both the information signal and noise which is amplified by first amplifier. But noise is the unwanted component which need to be minimized for which the low noise amplifier is designed. The low noise amplifier is designed to minimize noise by considering the trade-off between the impedance matching, choice of amplifier technology and selecting low noise biasing conditions. In this work we have tried to achieve the goals for the C band of microwave frequencies i.e. from 4 to 8 GHz using Advanced Design System (ADS) simulation software.","PeriodicalId":367360,"journal":{"name":"2017 IEEE International Conference on Circuits and Systems (ICCS)","volume":"22 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS1.2017.8325992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Amplification is one of the most vital operation in modern RF and microwave communication systems. Earlier microwave amplifiers were made of tubes like klystron, TWT's etc. but due to the development of solid state device technology now-a-days the microwave amplifiers are often designed using these devices like BJT's, FET's and newly developed heterojunction devices like HBT's and HEMT's. At the receiver of a communication system the first element being an antenna receives both the information signal and noise which is amplified by first amplifier. But noise is the unwanted component which need to be minimized for which the low noise amplifier is designed. The low noise amplifier is designed to minimize noise by considering the trade-off between the impedance matching, choice of amplifier technology and selecting low noise biasing conditions. In this work we have tried to achieve the goals for the C band of microwave frequencies i.e. from 4 to 8 GHz using Advanced Design System (ADS) simulation software.
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