A new ESD-aware power amplifier design method

X. Guan, Guang Chen, Lin Lin, Xin Wang, Albert Wang, Lee Yang, B. Zhao
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引用次数: 1

Abstract

This paper presents a new ESD-aware power amplifier (PA) design method, featuring S-parameter modeling and output impedance re-matching techniques, to achieve ESD+PA full-chip design optimization. The new method is verified using a 5 kV ESD-protected 2.4 GHz PA circuit designed and implemented in a 0.18 mum RFCMOS technology. Experiment shows substantial performance degradation of PA due to ESD effect, which can be recovered by using the new ESD-aware ESD design method.
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一种新的防静电功率放大器设计方法
本文提出了一种新的ESD感知功率放大器(PA)设计方法,采用s参数建模和输出阻抗再匹配技术,实现ESD+PA全芯片设计优化。采用0.18 μ m RFCMOS技术设计和实现的5kv防静电2.4 GHz PA电路验证了新方法。实验表明,由于静电放电的影响,聚光镜的性能有很大的下降,而采用新的防静电设计方法可以恢复这种下降。
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