Investigation on the Impact of Various Intercalation Doping on the Signal Integrity in ML-GNR Interconnects

P. Jha, B. Kumari, Manodipan Sahoo
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Abstract

In this work, we perform a comparative study of signal integrity (delay, noise and noise delay product) for three different intercalation doped, side contact (SC), Multi-Layer Graphene Nano-Ribbon (ML-GNR) interconnects. For the first time, crosstalk delay of Lithium (Li) intercalated ML-GNR is evaluated and compared with Arsenic Penta-Fluoride (AsF5) doped, Ferric Chloride (FeCl3) doped ML-GNRs and copper interconnects for both intermediate and global level interconnects at 8 nm technology node. It is observed that Li intercalated ML-GNRs have least crosstalk delay as compared to other intercalation doping with specularity index of (P=0.8) for both intermediate and global level interconnects. As far as noise is considered, Li, FeCl3 and AsF5 doped ML-GNR interconnects are comparable but copper interconnects is not a good recommendation for low noise applications. Therefore, our analytical report paves the way for Li intercalated ML-GNR as the next generation interconnect material for low delay applications.
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不同插层掺杂对ML-GNR互连信号完整性影响的研究
在这项工作中,我们对三种不同的插入掺杂,侧接触(SC),多层石墨烯纳米带(ML-GNR)互连的信号完整性(延迟,噪声和噪声延迟积)进行了比较研究。首次评估了锂(Li)插层ML-GNR的串扰延迟,并将其与五氟化砷(AsF5)掺杂、氯化铁(FeCl3)掺杂ML-GNR和铜互连在8 nm技术节点的中间和全局级互连中进行了比较。研究发现,与其他插层掺杂相比,Li插层ml - gnr具有最小的串扰延迟,在中间和全局级互连中,其镜面指数均为(P=0.8)。就噪声而言,Li, FeCl3和AsF5掺杂的ML-GNR互连是可比的,但铜互连不是低噪声应用的好建议。因此,我们的分析报告为Li嵌入ML-GNR作为低延迟应用的下一代互连材料铺平了道路。
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