B. Powell, K. Matocha, S. Chowdhury, K. Rangaswamy, C. Hundley, L. Gant
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引用次数: 7
Abstract
In this paper we demonstrate the performance and reliability of 1200V SiC DMOSFETs manufactured in a high volume 150mm Si CMOS foundry. These DMOSFETs exhibit less than a 10% shift in threshold voltage and practically no change in breakdown characteristics after high temperature stress tests at 175°C. The performance of very large area 6.30 × 9.45mm2, 11mΩ SiC DMOSFETs prove that device scaling is possible with a common process.
在本文中，我们展示了在大批量150mm Si CMOS铸造厂制造的1200V SiC dmosfet的性能和可靠性。在175℃高温应力测试后，这些dmosfet的阈值电压变化小于10%，击穿特性几乎没有变化。非常大面积的6.30 × 9.45mm2, 11mΩ SiC dmosfet的性能证明了器件缩放是可能的。
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