{"title":"Polysilicon emitter BICFET with super-current gain","authors":"W.L. Guo, Y. Song, M. Green, M.K. Movvej-Farshi","doi":"10.1109/TENCON.1995.496423","DOIUrl":null,"url":null,"abstract":"The BICFET with an emitter structure of poly-Si(n/sup +/)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 10/sup 6/ at low current level and the explanation for this high G has been made.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The BICFET with an emitter structure of poly-Si(n/sup +/)-thin insulator-semiconductor tunnel junction has been fabricated and measured. The small-signal current gain (G) of this device is in excess of 10/sup 6/ at low current level and the explanation for this high G has been made.
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