R. Mezui-mintsa, M. Tsouli, Z. Enkonda, N. Hassaine, M. Riet, B. Villeforceix, A. Konczykowska, S. Vuye, H. Wang
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Abstract
HBT power transistors thermal analysis and its application to amplifier design are presented in this paper. Device analysis and optimization have been made with respect to the power handling capability. Power HBTs for mobile and satellite communications have been fabricated. A C-band MIC amplifier is also presented.
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