{"title":"Fully balanced low-noise transconductance amplifiers with P1dB > 0dBm in 45nm CMOS","authors":"H. M. Geddada, J. Silva-Martínez, S. Taylor","doi":"10.1109/ESSCIRC.2011.6044949","DOIUrl":null,"url":null,"abstract":"This paper presents two linear broadband inductorless Low Noise Transconductance Amplifiers (LNTA) featuring high linearities for large signal (P1dB) and small signal (IIP3). The LNTAs utilize the complementary characteristics of NMOS and PMOS transistors to enhance the linearity. First prototype is a fully balanced current reuse LNTA achieving 0.12GHz bandwidth, minimum NF of 3dB, IIP3 of 10.8dBm and P1dB of 0dBm while dissipating 35mW. Second prototype proposes a low power bulk driven LNTA with 20mW of power consumption achieving comparable performances. Each LNTA occupy 0.06mm2 in 45nm CMOS.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"277 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents two linear broadband inductorless Low Noise Transconductance Amplifiers (LNTA) featuring high linearities for large signal (P1dB) and small signal (IIP3). The LNTAs utilize the complementary characteristics of NMOS and PMOS transistors to enhance the linearity. First prototype is a fully balanced current reuse LNTA achieving 0.12GHz bandwidth, minimum NF of 3dB, IIP3 of 10.8dBm and P1dB of 0dBm while dissipating 35mW. Second prototype proposes a low power bulk driven LNTA with 20mW of power consumption achieving comparable performances. Each LNTA occupy 0.06mm2 in 45nm CMOS.