Analytical Comparison of the Impact of Si and GaAs as Materials in Designing 3D Density Gradient Nanowire MOSFET for Low Power Applications

Abstract

Semiconductor industry has been one of the most promising industries and MOSFET is its main component. Extensive research is going on ever since it started to provide better performance and low-cost effective devices in the market. The study is done on a 3D density gradient nanowire MOSFET for showing the impact of using varied materials on the device performance. A comparison has been made between Silicon (Si) and Gallium Arsenide (GaAs) as semiconductor materials. DC and AC analysis have been done on both models and their results have been compared. The drain current in the Id-Vg and Id-Vd curve for GaAs used model is higher than the Si used model by about 10 times which is useful for analog applications. The threshold voltage for both models is 0.7V. Besides that, the electron concentration forming a potential well of the depth of about 104 for GaAs used material than the model made using Si as material. In the case of AC analysis, the transconductance range for the model using GaAs is almost double of the model designed using Si.