{"title":"Calculation of the spectrum of fundamental optical absorption compounds A3B5","authors":"O. Sologub","doi":"10.1109/CRMICO.2010.5632434","DOIUrl":null,"url":null,"abstract":"The work presents a model for the calculation of the spectral dependence of the intrinsic absorption edge of semiconductor solid solutions with a direct energy band structure at the example of GaAs. It can be used in mathematical models that describe the work of photoelectric converters.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The work presents a model for the calculation of the spectral dependence of the intrinsic absorption edge of semiconductor solid solutions with a direct energy band structure at the example of GaAs. It can be used in mathematical models that describe the work of photoelectric converters.
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