K. Tang, Linjun Wang, Jian Huang, Jijun Zhang, W. Shi, Yiben Xia
{"title":"Electrical and structural properties of Al-doped ZnO films","authors":"K. Tang, Linjun Wang, Jian Huang, Jijun Zhang, W. Shi, Yiben Xia","doi":"10.1109/IWJT.2010.5475011","DOIUrl":null,"url":null,"abstract":"Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5475011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested the crystalline quality of ZnO films decreased with the increase of Al doping concentrations and a maxmum carrier concentration is obtained for the film doped with 2 wt.% Al. The high temperature annealing process is helpful to enhance the Hall mobility of the films.
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