Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474895
Xiao Guo, Xiao-Rong Wang, Yu-Long Jiang, G. Ru, Bingzong Li
Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.
{"title":"Nickel silicide formation on Si(110) substrate","authors":"Xiao Guo, Xiao-Rong Wang, Yu-Long Jiang, G. Ru, Bingzong Li","doi":"10.1109/IWJT.2010.5474895","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474895","url":null,"abstract":"Nickel silicide formation on Si(110) substrate is investigated in this paper. Comparing with the samples fabricated on Si(100) substrate, it is revealed that a higher annealing temperature is required for NiSi formation on Si(110) substrate. X-ray diffraction and atomic force microscopy were employed for further material analysis. NiSi/Si(110) Schottky contacts were also fabricated for electrical characteristics evaluation. The formation kinetics for nickel silicidation on Si(110) substrates was also discussed in this paper.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121035664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474972
Y. Sasaki
The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.
{"title":"Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping process","authors":"Y. Sasaki","doi":"10.1109/IWJT.2010.5474972","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474972","url":null,"abstract":"The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"21 1-B 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125905763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474917
H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, N. Maehara, Y. Kawamura, Y. Nakashima, M. Hashimoto, H. Yoshimi, S. Sezaki, K. Kawakami, J. Reyes, S. Prussin
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities are almost the same in both samples. This means that activation ratio of B18 sample is much higher compared with that of BF2 sample. This is one of the advantages of cluster ion implantation.
{"title":"Carrier activation in cluster boron implanted Si","authors":"H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, N. Maehara, Y. Kawamura, Y. Nakashima, M. Hashimoto, H. Yoshimi, S. Sezaki, K. Kawakami, J. Reyes, S. Prussin","doi":"10.1109/IWJT.2010.5474917","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474917","url":null,"abstract":"Boron retained dose and carrier activation after spike RTA in Cluster B<inf>18</inf><sup>+</sup> (Octadecaborane : B<inf>18</inf>H<inf>11</inf><sup>+</sup>) implanted Si have been investigated comparing with BF<inf>2</inf> beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B<inf>18</inf> samples. In the same implant set dose, carrier concentrations in B<inf>18</inf> samples show almost twice compared with BF<inf>2</inf> samples although mobilities are almost the same in both samples. This means that activation ratio of B<inf>18</inf> sample is much higher compared with that of BF<inf>2</inf> sample. This is one of the advantages of cluster ion implantation.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116400847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474885
S. Qin, Y. J. Hu, A. Mcteer
The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic 11B implant, BF2, B18H22, C2B10H12 molecular implants, cluster B implant, and B2H6 and BF3 PLAD implants. It has been found that B2H6 PLAD and B18H22 molecular implants demonstrate the best RS-xj and abruptness characteristics. Beam-line BF2 implant shows poor RS-xj characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst RS-xj characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.
{"title":"Advanced boron-based ultra-low energy doping techniques on ultra-shallo junction fabrications","authors":"S. Qin, Y. J. Hu, A. Mcteer","doi":"10.1109/IWJT.2010.5474885","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474885","url":null,"abstract":"The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic <sup>11</sup>B implant, BF<inf>2</inf>, B<inf>18</inf>H<inf>22</inf>, C<inf>2</inf>B<inf>10</inf>H<inf>12</inf> molecular implants, cluster B implant, and B<inf>2</inf>H<inf>6</inf> and BF<inf>3</inf> PLAD implants. It has been found that B<inf>2</inf>H<inf>6</inf> PLAD and B<inf>18</inf>H<inf>22</inf> molecular implants demonstrate the best R<inf>S</inf>-x<inf>j</inf> and abruptness characteristics. Beam-line BF<inf>2</inf> implant shows poor R<inf>S</inf>-x<inf>j</inf> characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst R<inf>S</inf>-x<inf>j</inf> characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129724401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474978
W. Krull
Molecular implant (aka Cluster Implant) has been established as an alternative for boron and carbon implants in advanced technology applications. The unique features of molecular implant (especially self-amorphization and low EOR damage) enable the formation of aggressively shallow USJ with very high quality. Recent results using 300eV monomer equivalent implant energies will show junctions of 10nm, with low resistance. Experiments include the use of spike, millisecond and microsecond anneals, all with excellent results. In addition, the influence of carbon co-implants are shown to be significant even for these advanced implant and anneal processes. The variety of available carbon molecules will be discussed, focusing on the Si:C stress application. The requirement for stressor layer thickness drives the choice of carbon molecule and stressor layers up to 60nm in thickness will be discussed. In addition, the interaction between the carbon and dopant atoms will be shown to create a process window of moderate concentrations where good dopant junctions and effective stress layers can be formed.
{"title":"Advances in molecular implant technology","authors":"W. Krull","doi":"10.1109/IWJT.2010.5474978","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474978","url":null,"abstract":"Molecular implant (aka Cluster Implant) has been established as an alternative for boron and carbon implants in advanced technology applications. The unique features of molecular implant (especially self-amorphization and low EOR damage) enable the formation of aggressively shallow USJ with very high quality. Recent results using 300eV monomer equivalent implant energies will show junctions of 10nm, with low resistance. Experiments include the use of spike, millisecond and microsecond anneals, all with excellent results. In addition, the influence of carbon co-implants are shown to be significant even for these advanced implant and anneal processes. The variety of available carbon molecules will be discussed, focusing on the Si:C stress application. The requirement for stressor layer thickness drives the choice of carbon molecule and stressor layers up to 60nm in thickness will be discussed. In addition, the interaction between the carbon and dopant atoms will be shown to create a process window of moderate concentrations where good dopant junctions and effective stress layers can be formed.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128566097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474907
J. Bi, C. Hai, Zhengsheng Han
Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications.
{"title":"Improved radiation response of PDSOI LBBC BUSFET","authors":"J. Bi, C. Hai, Zhengsheng Han","doi":"10.1109/IWJT.2010.5474907","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474907","url":null,"abstract":"Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET is more suitable for radiation hard applications.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124631527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474970
S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov
This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.
{"title":"Advanced junction formation for sub-32nm logic devices","authors":"S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov","doi":"10.1109/IWJT.2010.5474970","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474970","url":null,"abstract":"This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116477415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474897
Y. Eng, Jyi-Tsong Lin, Yi-Hsuan Fan, Yu-Che Chang, Kuan-Yu Lu, Cheng-Hsien Chen, Chih-Hsuan Tai
This paper presents a highly scalable Π-shaped source/drain (Π-S/D) quasi-silicon-on-insulator (SOI) MOSFET and summarizes its preliminary characteristics compared with the recessed S/D SOI MOSFET and international technology roadmap for semiconductors (ITRS) roadmap values. SiGe-Si epitaxial growth, Si and SiGe etching, growth of epitaxial Si, and selective SiGe removal are used to form the Π-S/D in the quasi-SOI fabrication that no additional lithography mask is needed due mainly to the isolation-last-formed structures. Hence the advantages of the proposed quasi-SOI over conventional one, in device fabrication, are that the new quasi-SOI process can not only be completely compatible with the standard CMOS process, but can also achieve single-crystal silicon S/D regions. The three-dimensional numerical simulations carried out prove that a modified Π-S/D quasi-SOI transistor can meet ITRS requirements for high-performance devices in the 20 nm technology node and it means that the potential for planar bulk technology can still be used continuously.
本文提出了一种高度可扩展的Π-shaped源/漏极(Π-S/D)准绝缘体上硅(SOI) MOSFET，并与嵌入式S/D SOI MOSFET和国际半导体技术路线图(ITRS)路线图值进行了比较，总结了其初步特性。通过SiGe-Si外延生长、Si和SiGe蚀刻、外延Si生长和选择性SiGe去除，在准soi制造中形成Π-S/D，由于隔离最后形成的结构，不需要额外的光刻掩膜。因此，在器件制造中，与传统的准soi工艺相比，所提出的准soi工艺不仅可以与标准的CMOS工艺完全兼容，而且还可以实现单晶硅S/D区域。三维数值模拟结果表明，改进后的Π-S/D准soi晶体管可以满足20 nm技术节点上高性能器件的ITRS要求，这意味着平面本体技术的潜力仍然可以持续发挥。
{"title":"A highly scalable Π-shaped source/drain quasi-SOI MOS transistor","authors":"Y. Eng, Jyi-Tsong Lin, Yi-Hsuan Fan, Yu-Che Chang, Kuan-Yu Lu, Cheng-Hsien Chen, Chih-Hsuan Tai","doi":"10.1109/IWJT.2010.5474897","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474897","url":null,"abstract":"This paper presents a highly scalable Π-shaped source/drain (Π-S/D) quasi-silicon-on-insulator (SOI) MOSFET and summarizes its preliminary characteristics compared with the recessed S/D SOI MOSFET and international technology roadmap for semiconductors (ITRS) roadmap values. SiGe-Si epitaxial growth, Si and SiGe etching, growth of epitaxial Si, and selective SiGe removal are used to form the Π-S/D in the quasi-SOI fabrication that no additional lithography mask is needed due mainly to the isolation-last-formed structures. Hence the advantages of the proposed quasi-SOI over conventional one, in device fabrication, are that the new quasi-SOI process can not only be completely compatible with the standard CMOS process, but can also achieve single-crystal silicon S/D regions. The three-dimensional numerical simulations carried out prove that a modified Π-S/D quasi-SOI transistor can meet ITRS requirements for high-performance devices in the 20 nm technology node and it means that the potential for planar bulk technology can still be used continuously.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126558680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474912
A. Uedono, K. Tsutsui, S. Ishibashi, Hiromichi Watanabe, S. Kubota, K. Tenjinbayashi, Y. Nakagawa, B. Mizuno, T. Hattori, H. Iwai
Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0–10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.
{"title":"Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation","authors":"A. Uedono, K. Tsutsui, S. Ishibashi, Hiromichi Watanabe, S. Kubota, K. Tenjinbayashi, Y. Nakagawa, B. Mizuno, T. Hattori, H. Iwai","doi":"10.1109/IWJT.2010.5474912","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474912","url":null,"abstract":"Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0–10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130204365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-05-10DOI: 10.1109/IWJT.2010.5474964
J. Pu, Lei Sun, R. Han
The performance of n-channel gate-all-around silicon nanowire FETs with asymmetric barrier heights at source/drain (ASB-SiNW-FET) was simulated. Some impact factors are studied. The results suggest that the drain current and threshold voltage are mainly determined by source-side barrier height (S-SBH). Increasing S-SBH or decreasing nanowire radius can optimize sub-threshold slope, while decreasing S-SBH can enhance the drain current and suppress the fluctuation of threshold voltage.
{"title":"Performance estimations of gate-all-around silicon nanowire FETs with asymmetric barrier heights at source/drain","authors":"J. Pu, Lei Sun, R. Han","doi":"10.1109/IWJT.2010.5474964","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474964","url":null,"abstract":"The performance of n-channel gate-all-around silicon nanowire FETs with asymmetric barrier heights at source/drain (ASB-SiNW-FET) was simulated. Some impact factors are studied. The results suggest that the drain current and threshold voltage are mainly determined by source-side barrier height (S-SBH). Increasing S-SBH or decreasing nanowire radius can optimize sub-threshold slope, while decreasing S-SBH can enhance the drain current and suppress the fluctuation of threshold voltage.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131622339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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