L. Sheng, E. De Backer, D. Wojciechowski, J. De Greve, K. Dhondt, S. Boonen, D. Malschaert, E. Snyder
{"title":"Surface Roughness Enhanced Current in Defectively Stressing Poly-Oxide-Poly Capacitors","authors":"L. Sheng, E. De Backer, D. Wojciechowski, J. De Greve, K. Dhondt, S. Boonen, D. Malschaert, E. Snyder","doi":"10.1109/IRWS.2006.305247","DOIUrl":null,"url":null,"abstract":"Surface roughness enhanced current stressing is shown to enhance the dielectric breakdown in poly-oxide-poly capacitors. Moreover, it is demonstrated for the first time that the changes of sophisticated polysilicon surface features as depicted by AFM-PSD (power spectral density) synthesis can globally become the dominant \"defects\" in deteriorating the dielectric reliability under a high electric field","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Surface roughness enhanced current stressing is shown to enhance the dielectric breakdown in poly-oxide-poly capacitors. Moreover, it is demonstrated for the first time that the changes of sophisticated polysilicon surface features as depicted by AFM-PSD (power spectral density) synthesis can globally become the dominant "defects" in deteriorating the dielectric reliability under a high electric field
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
