N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga
{"title":"A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization","authors":"N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga","doi":"10.1109/ISLC.2000.882264","DOIUrl":null,"url":null,"abstract":"We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.
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