V. Emelianov, A. Sogoyan, S.V. Cherepko, O.V. Meshurov, V.N. Ulimov, A. Chumakov, V. Rogov, A. Nikiforov
{"title":"Thermal and field dependencies of latent relaxation processes in irradiated MOS devices","authors":"V. Emelianov, A. Sogoyan, S.V. Cherepko, O.V. Meshurov, V.N. Ulimov, A. Chumakov, V. Rogov, A. Nikiforov","doi":"10.1109/RADECS.1997.698843","DOIUrl":null,"url":null,"abstract":"Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed.
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