{"title":"Current enhanced double-gate TFET with source pocket and asymmetric gate oxide","authors":"Zhonghua Yu, Yunpeng Dong, Xinnan Lin, Lining Zhang","doi":"10.1109/INEC.2016.7589410","DOIUrl":null,"url":null,"abstract":"In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enhance the current drive. Compared with conventional DG-TFET, the proposed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The reason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area caused by the source pocket.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enhance the current drive. Compared with conventional DG-TFET, the proposed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The reason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area caused by the source pocket.
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