A. Sánchez-Ramos, J. R. Loo-Yau, E. A. Hernandez-Dominguez, A. Villagran-Gutierrez
{"title":"Simple Methodology to Model On-Chip Inductors for CMOS RF Integrated Circuits Design","authors":"A. Sánchez-Ramos, J. R. Loo-Yau, E. A. Hernandez-Dominguez, A. Villagran-Gutierrez","doi":"10.1109/CONCAPAN48024.2022.9997753","DOIUrl":null,"url":null,"abstract":"This work presents an analytical method to extract the elements of the asymmetric single-$\\pi$ electrical equivalent circuit of on-chip inductors. The elements are extracted from linear regression using the y-parameters of the chip inductors. The high correlation of the S-parameters between the model and the measurement of an on-chip inductor manufactured under the 0.5 $\\mu{\\mathrm{m}}$ CMOS process and electromagnetic simulation data based on the 0.13 $\\mu{\\mathrm{m}}$ CMOS process validates the proposed methodology up to 20 GHz.","PeriodicalId":138415,"journal":{"name":"2022 IEEE 40th Central America and Panama Convention (CONCAPAN)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 40th Central America and Panama Convention (CONCAPAN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONCAPAN48024.2022.9997753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents an analytical method to extract the elements of the asymmetric single-$\pi$ electrical equivalent circuit of on-chip inductors. The elements are extracted from linear regression using the y-parameters of the chip inductors. The high correlation of the S-parameters between the model and the measurement of an on-chip inductor manufactured under the 0.5 $\mu{\mathrm{m}}$ CMOS process and electromagnetic simulation data based on the 0.13 $\mu{\mathrm{m}}$ CMOS process validates the proposed methodology up to 20 GHz.