N-π Equivalent Circuit for Si CMOS on-Chip Inductor Modeling

Abstract

We carried out the modeling of silicon CMOS on-chip spiral inductors based on an n-ges4 equivalent circuit. Due to the distributed nature of the inductor, the n- (nges4) structure can be more precisely characterize the inductor behavior as compared to the conventional single-pi or double-pi models with an operating frequency beyond the GHz range. The parameter extraction with a characteristic-function approach for the equivalent circuit is achieved through the transformation of the ABCD-matrix.