A physics-based compact model for a-InGaZnO thin-film transistors

Abstract

A compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) with the tail and deep trap densities of states is proposed. Based on the surface potential, an explicit and closed-form expression of the drain current considering exponential tail and deep trap charges is developed. The surface potential model is achieved analytically without the process of amendment and suitable for circuit simulations. Furthermore, our models are verified by numerical results and experimental data for the cases of the different operational voltages.