Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

L. Gerrer, S. Amoroso, P. Asenov, J. Ding, B. Cheng, F. Adamu-Lema, S. Markov, D. Reid, C. Millar, A. Asenov
{"title":"Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology","authors":"L. Gerrer, S. Amoroso, P. Asenov, J. Ding, B. Cheng, F. Adamu-Lema, S. Markov, D. Reid, C. Millar, A. Asenov","doi":"10.1109/IRPS.2013.6531972","DOIUrl":null,"url":null,"abstract":"In this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6531972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20

Abstract

In this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived.
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统计可靠性和可变性之间的相互作用:一种综合的晶体管-电路仿真技术
在本文中,我们提出了一个可靠性仿真框架,从原子仿真到电路仿真,包括与变异性源的陷阱相互作用。通过动态蒙特卡罗引擎再现捕获和脱捕获动力学,可以在原子器件的大型集成上模拟氧化物降解,如BTI和RTN现象。在此基础上提取了紧凑模型,并推导了电路寿命预测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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