A max mode control LDO with a good behavior at PSRR and line regulation and load regulation

Mao Li, Yuxing Zhou, Dengjie Wang, S. Yuan, Wenhuan Luan, Xin Lin, Ziqiang Wang, Chun Zhang, Xiang Xie
{"title":"A max mode control LDO with a good behavior at PSRR and line regulation and load regulation","authors":"Mao Li, Yuxing Zhou, Dengjie Wang, S. Yuan, Wenhuan Luan, Xin Lin, Ziqiang Wang, Chun Zhang, Xiang Xie","doi":"10.1109/EDSSC.2017.8355966","DOIUrl":null,"url":null,"abstract":"This paper proposes a max mode control low-dropout voltage regulator (LDO) with a novel structure, using MOS bias in depth linear region that control digital MOS to achieve a low ripple and a good behavior power supply rejections ratio (PSRR)at 10GHz or even higher frequency depending on load capacitance in a specified range. The LDO is designed on-chip in 40nm CMOS technology. The simulation results shows that the line regulation is 2.8mV/V and load regulation is less than 0.13mV/mA with a 100Pf as load. PSRR is improved from -40dB@10GHz, approximately. The constant output is 1.1V with minimal input voltage decreasing to 1.26V.The quiesent current is 120uA, 151.2uW under 1.26V supply.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8355966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper proposes a max mode control low-dropout voltage regulator (LDO) with a novel structure, using MOS bias in depth linear region that control digital MOS to achieve a low ripple and a good behavior power supply rejections ratio (PSRR)at 10GHz or even higher frequency depending on load capacitance in a specified range. The LDO is designed on-chip in 40nm CMOS technology. The simulation results shows that the line regulation is 2.8mV/V and load regulation is less than 0.13mV/mA with a 100Pf as load. PSRR is improved from -40dB@10GHz, approximately. The constant output is 1.1V with minimal input voltage decreasing to 1.26V.The quiesent current is 120uA, 151.2uW under 1.26V supply.
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具有良好的PSRR、线路调节和负载调节性能的最大模控制LDO
本文提出了一种结构新颖的最大模控制低降稳压器(LDO),利用MOS深度线性区偏置控制数字MOS,在10GHz甚至更高的频率下,根据负载电容在特定范围内实现低纹波和良好的行为电源抑制比(PSRR)。LDO采用40nm CMOS技术在片上设计。仿真结果表明,当负载为100Pf时,线路稳压为2.8mV/V,负载稳压小于0.13mV/mA。PSRR大约从-40dB@10GHz改进。恒定输出为1.1V,最小输入电压降至1.26V。在1.26V电源下,静态电流为120uA, 151.2uW。
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