{"title":"Millimetre wave receiver components using packaged HEMTs","authors":"H. Ashoka, V. Waris, P. Martin","doi":"10.1109/MWSYM.1992.187920","DOIUrl":null,"url":null,"abstract":"A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"211 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.187920","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<>
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