{"title":"About Thermal Modes of Series-Connected Power Mosfets","authors":"N. Bespalov, A. Lysenkov","doi":"10.1109/APEDE.2018.8542261","DOIUrl":null,"url":null,"abstract":"The choice of a power MOSFET is associated with a search for a compromise between the desire for high reliability of the final device and the desire to make maximum use of its power capabilities. The article deals with the problems of thermal calculations of series-connected power MOSFETs. The method for calculating the temperature mode of the transistor is described. The results of modeling the influence of the technological variability of the electrothermal parameters on the temperature distribution over the connected devices are presented.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE.2018.8542261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The choice of a power MOSFET is associated with a search for a compromise between the desire for high reliability of the final device and the desire to make maximum use of its power capabilities. The article deals with the problems of thermal calculations of series-connected power MOSFETs. The method for calculating the temperature mode of the transistor is described. The results of modeling the influence of the technological variability of the electrothermal parameters on the temperature distribution over the connected devices are presented.
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