Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices

O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina
{"title":"Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices","authors":"O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina","doi":"10.1109/IWCE.2009.5091131","DOIUrl":null,"url":null,"abstract":"In this work, the kldrp method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results of Si UTB double gate nMOS and pMOS devices.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

In this work, the kldrp method is used to calculate the electronic subband structure. To reduce the computational cost of the carrier concentration calculation and henceforth the required number of numerical solutions of the Schrodinger equation, an efficient 2D k-space integration by means of the Clenshaw-Curtis method is proposed. The suitability of our approach is demonstrated by simulation results of Si UTB double gate nMOS and pMOS devices.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
应变硅UTB器件中子带分布函数的数值正交
在这项工作中,使用kldrp方法计算电子子带结构。为了减少载流子浓度计算的计算成本,从而减少薛定谔方程数值解的数量,提出了一种基于Clenshaw-Curtis方法的二维k空间积分方法。Si UTB双栅nMOS和pMOS器件的仿真结果证明了该方法的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Correlation Effects in Silicon Nanowire MOSFETs Charge-based Mobility Modeling for Organic Semiconductors Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport Semiconductor Technology-Trends, Challenges and Opportunities Computation of Complex Band Structures in Bulk and Confined Structures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1