P. Eliseev, H. Li, G.T. Liu, A. Stintz, T. Newell, L. Lester, K. Malloy
{"title":"Gain in ultra-low-threshold InAs/InGaAs quantum dot lasers","authors":"P. Eliseev, H. Li, G.T. Liu, A. Stintz, T. Newell, L. Lester, K. Malloy","doi":"10.1109/ISLC.2000.882290","DOIUrl":null,"url":null,"abstract":"Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.
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