High dynamic range CMOS-MEMS capacitive accelerometer array

Abstract

This paper reports on the design and characterization of a high-g CMOS-MEMS capacitive accelerometer array with 92 mG bias stability and ± 50 kG designed input range with a validated 91 dB dynamic range. The on-chip integration of the read-out circuitry and the MEMS transducer minimizes sense-node parasitic capacitance, hence improving sensitivity and dynamic range. The small size and mass of individual accelerometer cells ensure high-g survivability. Averaging the signals from the accelerometer cells across the array improves the signal to noise ratio, hence improving the dynamic range.