A Low-Spurious E-Band GaAs MMIC Frequency Converter for Over-Gbps Wireless Communication

Yasuhiro Morita, S. Kishimoto, M. Ito, K. Motoi, K. Kunihiro
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引用次数: 3

Abstract

A highly integrated, low-spurious E-band MMIC frequency converter, which comprises a sub-harmonic mixer with an LO multiplier and a carrier driver, is presented. An APDP (Anti-Parallel Diode Pair) is used to the mixer and the multiplier so as to prevent a carrier leakage and the 2nd harmonic of an input LO, respectively. Several filters are also applied to suppress some spurious signals from the circuits. An MMIC is fabricated in 0.13um GaAs pHEMT technology, and measurement results show that a ratio between the desired carrier and the other spurious signals is as high as > 50 dB, and that the mixer has conversion loss of <; 12 dB and carrier-RF isolation of > 51 dB. Furthermore, the fabricated MMIC is applied to E-band equipment, where 1.2Gbps 64QAM wireless communication with 250MHz bandwidth (spectral efficiency of 4.8 bit/s/Hz) is achieved.
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一种用于超gbps无线通信的低杂散e带GaAs MMIC变频器
提出了一种高集成度、低杂散的e频带MMIC频率转换器,该转换器由带LO乘法器和载波驱动器的次谐波混频器组成。一个APDP(反并联二极管对)被用于混频器和乘法器,以防止载波泄漏和输入LO的二次谐波,分别。此外,还应用了几个滤波器来抑制电路中的一些杂散信号。采用0.13um GaAs pHEMT技术制作了MMIC,测量结果表明,所需载波与其他杂散信号之比高达> 50 dB,混频器的转换损耗为51 dB。并将该MMIC应用于e波段设备,实现了带宽为250MHz的1.2Gbps 64QAM无线通信(频谱效率为4.8 bit/s/Hz)。
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