{"title":"ZnO nanowire-based Schottky-barrier-type UV light-emitting diodes","authors":"Qifeng Zhang, Yanxin Wang, Hui Sun, Jin-lei Wu","doi":"10.1109/CLEO.2006.4627935","DOIUrl":null,"url":null,"abstract":"Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.","PeriodicalId":394830,"journal":{"name":"2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2006.4627935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.
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