Recent results concerning the influence of hydrogen on the bias temperature instability

G. Pobegen, M. Nelhiebel, T. Grasser
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引用次数: 2

Abstract

Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift capability of a device under NBTS, thereby increasing the sum of both precursors and activated defects. Furthermore hydrogen passivation has a positive effect on PBTI, presumably through the passivation of pre-existing oxide traps.
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氢对偏置温度不稳定性影响的最新研究结果
除了关于氢对NBTI影响的激烈辩论外,我们还提出了几个过去很少或没有受到关注的细节。实验证明,氢不仅钝化界面陷阱,而且钝化氧化正电荷或边界陷阱。除了钝化外,氢还增加了NBTS下器件的整体漂移能力,从而增加了前驱体和激活缺陷的总和。此外,氢钝化对PBTI有积极的影响,可能是通过钝化预先存在的氧化物陷阱。
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