A. Melton, E. Burgett, M. Jamil, T. Zaidi, N. Hertel, I. Ferguson
{"title":"GaN as a neutron detection material","authors":"A. Melton, E. Burgett, M. Jamil, T. Zaidi, N. Hertel, I. Ferguson","doi":"10.1109/SECON.2010.5453842","DOIUrl":null,"url":null,"abstract":"GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma discrimination properties.","PeriodicalId":286940,"journal":{"name":"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.2010.5453842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma discrimination properties.
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