First principles calculation of Manganese based half Heusler compounds

L. Mohan, Sukhender Sukhender, Sudesh Kumar, D. Sharma, A. Verma
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引用次数: 1

Abstract

The Half-Heusler compounds exhibit a diverse range of tuneable properties including half-metallic ferromagnetism topological insulator, solar cells and thermoelectric converters. We have studied four half-Heusler compounds MnFeIn, MnFeGa, MnNiAs and MnNiSb. The nature and properties of half-heusler compounds can be studied on the bases of their valance electron count. In this paper, Fe based compounds have 18 valence electrons; whereas 22 valence electrons in Ni based. The Density Functional Theory (DFT) has been performed with WIEN2k code. Ni based compounds with Mn located at octahedral sites are half-metals as revealed from the Density of States (DoS) and band structure calculations. In all of them, spin-up channels are conducting; whereas in MnNiAs and MnNiSb spin-down channels have the small band gaps. MnNiAs and MnNiSb exhibit half-metallic property with integer magnetic moments of 4 μB per formula unit and half-metallic gaps of 0.15 and 0.17 eV at their equilibrium volume respectively.
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锰基半Heusler化合物的第一性原理计算
Half-Heusler化合物具有多种可调谐特性,包括半金属铁磁性拓扑绝缘体、太阳能电池和热电转换器。我们研究了四种半heusler化合物MnFeIn, MnFeGa, MnNiAs和MnNiSb。半赫斯勒化合物的性质和性质可以根据它们的价电子数来研究。本文中,铁基化合物有18个价电子;而镍基中有22个价电子。密度泛函理论(DFT)已执行与WIEN2k代码。从态密度(DoS)和能带结构计算中可以看出,在八面体位置有Mn的Ni基化合物是半金属。在所有这些国家中,自旋频道都在进行;而在MnNiAs和MnNiSb中,自旋下通道具有较小的带隙。MnNiAs和MnNiSb表现出半金属性质,在平衡体积下的磁矩为4 μB,半金属间隙分别为0.15和0.17 eV。
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