M. Lang, Z. Wang, A. Thiede, H. Lienhart, T. Jakobus, W. Bronner, J. Hornung, A. Hulsmann
{"title":"A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates","authors":"M. Lang, Z. Wang, A. Thiede, H. Lienhart, T. Jakobus, W. Bronner, J. Hornung, A. Hulsmann","doi":"10.1109/GAAS.1998.722624","DOIUrl":null,"url":null,"abstract":"Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.