{"title":"Kirk Effect Induced Bias Dependency of Thermal Resistance in SiGe HBTs","authors":"Hao Jiang, Jieyin Zheng, M. Recanelli","doi":"10.1109/SMIC.2008.25","DOIUrl":null,"url":null,"abstract":"The thermal resistance of SiGe HBTs for high power applications reduces significantly when the bias current increases. This phenomenon is explained by both measurements and simulations for the first time.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.25","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The thermal resistance of SiGe HBTs for high power applications reduces significantly when the bias current increases. This phenomenon is explained by both measurements and simulations for the first time.
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