{"title":"Single die broadband CMOS power amplifier and tracker with 37% overall efficiency for TDD/FDD LTE applications","authors":"F. Balteanu","doi":"10.1109/RFIC.2016.7508316","DOIUrl":null,"url":null,"abstract":"This paper presents a 2.3GHz - 2.7GHz broadband CMOS FDD/TDD LTE Band 7. 38, 40 and 41 power amplifier (PA) fully integrated with a fast envelope tracker (ET) on a single 0.18μm CMOS die. The PA and the tracker achieve a 37% overall efficiency for 26.5dBm and -39dBc ACLR1. The entire design including the input/output match uses an active silicon area around 2.7mm2.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2016.7508316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a 2.3GHz - 2.7GHz broadband CMOS FDD/TDD LTE Band 7. 38, 40 and 41 power amplifier (PA) fully integrated with a fast envelope tracker (ET) on a single 0.18μm CMOS die. The PA and the tracker achieve a 37% overall efficiency for 26.5dBm and -39dBc ACLR1. The entire design including the input/output match uses an active silicon area around 2.7mm2.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
