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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)最新文献

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A cross-coupled switch-RC mixer-first technique achieving +41dBm out-of-band IIP3 交叉耦合开关- rc混频器优先技术,实现+41dBm带外IIP3
Pub Date : 2016-05-23 DOI: 10.1109/RFIC.2016.7508297
Hugo Westerveld, E. Klumperink, B. Nauta
With the growing amount of wireless devices, interference robustness is a receiver specification of increasing importance. This paper presents a technique that improves both out-of-band compression and weakly non-linear distortion. It mitigates the effect of non-linearity in the baseband amplifier by preceding it by a cross-coupled passive filter. This provides a highly linear passive shunt path for out-of-band currents, while maintaining wideband input matching. The 65nm CMOS prototype chip achieves 41dBm out-of-band IIP3 at 40MHz offset and an 11dBm out-of-band blocker compression point. The chip has an area of 0.8mm2 and consumes 46mW from a 1.2V supply.
随着无线设备数量的不断增加,干扰鲁棒性是一个越来越重要的接收机规格。本文提出了一种同时改善带外压缩和弱非线性失真的技术。它通过在基带放大器前加一个交叉耦合无源滤波器来减轻非线性的影响。这为带外电流提供了一个高度线性的无源分流路径,同时保持宽带输入匹配。65nm CMOS原型芯片在40MHz偏移量下实现41dBm带外IIP3和11dBm带外阻塞压缩点。该芯片的面积为0.8mm2,功耗为46mW,电源为1.2V。
{"title":"A cross-coupled switch-RC mixer-first technique achieving +41dBm out-of-band IIP3","authors":"Hugo Westerveld, E. Klumperink, B. Nauta","doi":"10.1109/RFIC.2016.7508297","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508297","url":null,"abstract":"With the growing amount of wireless devices, interference robustness is a receiver specification of increasing importance. This paper presents a technique that improves both out-of-band compression and weakly non-linear distortion. It mitigates the effect of non-linearity in the baseband amplifier by preceding it by a cross-coupled passive filter. This provides a highly linear passive shunt path for out-of-band currents, while maintaining wideband input matching. The 65nm CMOS prototype chip achieves 41dBm out-of-band IIP3 at 40MHz offset and an 11dBm out-of-band blocker compression point. The chip has an area of 0.8mm2 and consumes 46mW from a 1.2V supply.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116667887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Broadband digitally-controlled power amplifier based on CMOS / GaN combination 基于CMOS / GaN组合的宽带数字控制功率放大器
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508300
Varish Diddi, Shuichi Sakata, S. Shinjo, Voravit Vorapipat, R. Eden, P. Asbeck
A multiWatt RF power amplifier operating in the frequency range 0.5 to 1.2 GHz is reported, whose output amplitude is determined by digital input words (“RF Power DAC operation”). The amplifier employs a CMOS IC for digital control, directly connected to a GaN FET operating in common-gate mode. The use of the GaN FET allows power supply voltages in excess of 15 V to be used. A load resistance of 50 ohms can be directly connected to the GaN FET, thereby avoiding bandwidth limitations from output matching networks. Output power in the range 2 to 3 W and drain efficiencies above 50% are obtained over more than an octave of bandwidth.
本文报道了一种工作在0.5 ~ 1.2 GHz频率范围内的多瓦射频功率放大器,其输出幅度由数字输入字(“射频功率DAC操作”)决定。放大器采用CMOS IC进行数字控制,直接连接到在共门模式下工作的GaN场效应管。GaN场效应管的使用允许使用超过15v的电源电压。50欧姆的负载电阻可以直接连接到GaN场效应管,从而避免了输出匹配网络的带宽限制。输出功率范围为2至3w,漏极效率超过50%,带宽超过一个倍频程。
{"title":"Broadband digitally-controlled power amplifier based on CMOS / GaN combination","authors":"Varish Diddi, Shuichi Sakata, S. Shinjo, Voravit Vorapipat, R. Eden, P. Asbeck","doi":"10.1109/RFIC.2016.7508300","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508300","url":null,"abstract":"A multiWatt RF power amplifier operating in the frequency range 0.5 to 1.2 GHz is reported, whose output amplitude is determined by digital input words (“RF Power DAC operation”). The amplifier employs a CMOS IC for digital control, directly connected to a GaN FET operating in common-gate mode. The use of the GaN FET allows power supply voltages in excess of 15 V to be used. A load resistance of 50 ohms can be directly connected to the GaN FET, thereby avoiding bandwidth limitations from output matching networks. Output power in the range 2 to 3 W and drain efficiencies above 50% are obtained over more than an octave of bandwidth.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114988816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A wideband single-PLL RF receiver for simultaneous multi-band and multi-channel digital car Radio reception 一种宽带单锁相环射频接收机,用于同时接收多波段和多通道数字汽车无线电
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508319
J. van Sinderen, L. Breems, H. Brekelmans, Frank Leong, N. Pavlovic, R. Rutten, J. Niehof, R. Roovers, Bernard Burdiek, J. Rudolph, Ulrich Möhlmann, Peter Blinzer, M. Biehl, N. Gabriel, Andreas Wichern, G. Schippmann, Frank Rethmeier, J. Klimczak, Joerg Wenzel, R. Pilaski
This paper describes a single-PLL, fixed-oscillator, wide-band multi-tuner HD Radio & DAB/T-DMB receiver for concurrent multi-band & multi-channel car radio reception, fully integrated in a 65nm CMOS SoC. Besides saving area and power for the LO and clock generation, the presented architecture also prevents oscillator pulling and spurs. Harmonic rejection mixers have been used to suppress down-conversion with LO harmonics up to 60dB, which reduces the required amount of RF filtering. The DAB measurement results show best-in-class blocker performance (FoS up to 70dBc) in combination with state-of-the-art sensitivity down to -102dBm.
本文介绍了一种单锁相环、固定振荡器、宽带多调谐器高清收音机和DAB/T-DMB接收机,用于并发多频段和多通道汽车无线电接收,完全集成在65nm CMOS SoC中。除了为本LO和时钟的产生节省面积和功耗外,该结构还可以防止振荡器的拉拔和杂散。谐波抑制混频器已被用于抑制LO谐波高达60dB的下变频,从而减少了所需的射频滤波量。DAB测量结果显示了同类最佳的阻挡性能(FoS高达70dBc)以及最先进的灵敏度(低至-102dBm)。
{"title":"A wideband single-PLL RF receiver for simultaneous multi-band and multi-channel digital car Radio reception","authors":"J. van Sinderen, L. Breems, H. Brekelmans, Frank Leong, N. Pavlovic, R. Rutten, J. Niehof, R. Roovers, Bernard Burdiek, J. Rudolph, Ulrich Möhlmann, Peter Blinzer, M. Biehl, N. Gabriel, Andreas Wichern, G. Schippmann, Frank Rethmeier, J. Klimczak, Joerg Wenzel, R. Pilaski","doi":"10.1109/RFIC.2016.7508319","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508319","url":null,"abstract":"This paper describes a single-PLL, fixed-oscillator, wide-band multi-tuner HD Radio & DAB/T-DMB receiver for concurrent multi-band & multi-channel car radio reception, fully integrated in a 65nm CMOS SoC. Besides saving area and power for the LO and clock generation, the presented architecture also prevents oscillator pulling and spurs. Harmonic rejection mixers have been used to suppress down-conversion with LO harmonics up to 60dB, which reduces the required amount of RF filtering. The DAB measurement results show best-in-class blocker performance (FoS up to 70dBc) in combination with state-of-the-art sensitivity down to -102dBm.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120943944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An RF-powered FSK/ASK receiver for remotely controlled systems 用于远程控制系统的射频供电FSK/ASK接收器
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508292
R. Guerra, A. Finocchiaro, G. Papotto, B. Messina, Leandro Grasso, R. La Rosa, G. Zoppi, Giuseppe Notarangelo, G. Palmisano
A fully integrated RF-powered receiver for remotely controlled systems is presented. The receiver adopts ASK and FSK modulations and is capable of operating in the ISM bands of 433 MHz, 869 MHz, and 915 MHz, while achieving a bit rate down to 62 kb/s. The circuit includes an RF harvester and a power management unit for the RF to DC power conversion and control, respectively, and an OTP memory with a digital interface for the operating configuration. Measurements show a harvester sensitivity of -18.8 dBm and accurate ASK demodulation with a modulation index as low as 10%. The current consumption is 87 μA and 720 μA for the ASK and FSK receiving mode, respectively. The circuit was fabricated in a 0.13-μm CMOS technology and occupies a core area of 2.2 mm2.
提出了一种用于远程控制系统的全集成射频供电接收机。该接收机采用ASK和FSK调制,能够在433 MHz、869 MHz和915 MHz的ISM频段工作,比特率低至62 kb/s。该电路包括射频采集器和电源管理单元,分别用于射频到直流功率转换和控制,以及具有用于操作配置的数字接口的OTP存储器。测量结果表明,收割机的灵敏度为-18.8 dBm,具有精确的ASK解调,调制指数低至10%。接收方式为ASK和FSK时,功耗分别为87 μA和720 μA。该电路采用0.13 μm CMOS工艺,核心面积为2.2 mm2。
{"title":"An RF-powered FSK/ASK receiver for remotely controlled systems","authors":"R. Guerra, A. Finocchiaro, G. Papotto, B. Messina, Leandro Grasso, R. La Rosa, G. Zoppi, Giuseppe Notarangelo, G. Palmisano","doi":"10.1109/RFIC.2016.7508292","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508292","url":null,"abstract":"A fully integrated RF-powered receiver for remotely controlled systems is presented. The receiver adopts ASK and FSK modulations and is capable of operating in the ISM bands of 433 MHz, 869 MHz, and 915 MHz, while achieving a bit rate down to 62 kb/s. The circuit includes an RF harvester and a power management unit for the RF to DC power conversion and control, respectively, and an OTP memory with a digital interface for the operating configuration. Measurements show a harvester sensitivity of -18.8 dBm and accurate ASK demodulation with a modulation index as low as 10%. The current consumption is 87 μA and 720 μA for the ASK and FSK receiving mode, respectively. The circuit was fabricated in a 0.13-μm CMOS technology and occupies a core area of 2.2 mm2.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128789819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
An 8mW, 1GHz span, passive spectrum scanner with > +31dBm out-of-band IIP3 8mW, 1GHz,无源频谱扫描仪,> +31dBm带外IIP3
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508305
Neha Sinha, Mansour Rachid, S. Pamarti
A 65nm CMOS, 8mW spectrum scanner using simple but linear periodically time-varying (LPTV) circuits is presented. The scanner spans a 1GHz spectrum by providing sharp filters at programmable centre frequencies. Its passive structure gives it a measured out-of-band IIP3 of > +31dBm and a sensitivity of <; -142dBm/Hz across the 1GHz band leading to an SFDR of 75dB in a 1MHz resolution bandwidth.
提出了一种采用简单线性周期性时变(LPTV)电路的65nm CMOS 8mW频谱扫描器。该扫描仪通过提供可编程中心频率的锐利滤波器,跨越1GHz频谱。它的被动结构使其测量到的带外IIP3 > +31dBm,灵敏度<;-142dBm/Hz,导致在1MHz分辨率带宽下的SFDR为75dB。
{"title":"An 8mW, 1GHz span, passive spectrum scanner with > +31dBm out-of-band IIP3","authors":"Neha Sinha, Mansour Rachid, S. Pamarti","doi":"10.1109/RFIC.2016.7508305","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508305","url":null,"abstract":"A 65nm CMOS, 8mW spectrum scanner using simple but linear periodically time-varying (LPTV) circuits is presented. The scanner spans a 1GHz spectrum by providing sharp filters at programmable centre frequencies. Its passive structure gives it a measured out-of-band IIP3 of > +31dBm and a sensitivity of <; -142dBm/Hz across the 1GHz band leading to an SFDR of 75dB in a 1MHz resolution bandwidth.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128711435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 5-GHz inductor-noise cancelling receiver with 1.8 dB noise figure in 65nm LP CMOS 一种噪声系数为1.8 dB的65nm LP CMOS 5 ghz电感降噪接收器
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508256
Chuan Qin, Lei Zhang, Zhijian Pan, Li Zhang, Yan Wang, Zhiping Yu
In this paper, a novel receiver architecture with inductor-noise cancellation technique is presented. The proposed receiver employs two separate down-conversion paths driven by I/Q LOs respectively, and the noise of on-chip gate inductor of common-source LNA is cancelled at the baseband output, without additional penalty on power consumption, while the signal is in-phase and strengthened. The noise figure is therefore significantly improved versus prior arts. A demo 5-GHz receiver employing the proposed architecture is designed and implemented in a 65-nm low power CMOS process. Measured result shows a noise figure of 1.8 dB at 5 GHz band, while consuming only 95 mW of power from a 1.2 V supply.
本文提出了一种采用电感噪声消除技术的新型接收机结构。该接收机采用分别由I/Q LOs驱动的两条独立的下变频路径,在基带输出端消除了共源LNA片上门电感的噪声,而不增加功耗,同时信号同相增强。因此,与现有技术相比,噪声系数得到了显著改善。在65纳米低功耗CMOS工艺中设计并实现了采用该架构的5 ghz接收器演示。测量结果显示,在5 GHz频段噪声系数为1.8 dB,而从1.2 V电源中仅消耗95 mW的功率。
{"title":"A 5-GHz inductor-noise cancelling receiver with 1.8 dB noise figure in 65nm LP CMOS","authors":"Chuan Qin, Lei Zhang, Zhijian Pan, Li Zhang, Yan Wang, Zhiping Yu","doi":"10.1109/RFIC.2016.7508256","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508256","url":null,"abstract":"In this paper, a novel receiver architecture with inductor-noise cancellation technique is presented. The proposed receiver employs two separate down-conversion paths driven by I/Q LOs respectively, and the noise of on-chip gate inductor of common-source LNA is cancelled at the baseband output, without additional penalty on power consumption, while the signal is in-phase and strengthened. The noise figure is therefore significantly improved versus prior arts. A demo 5-GHz receiver employing the proposed architecture is designed and implemented in a 65-nm low power CMOS process. Measured result shows a noise figure of 1.8 dB at 5 GHz band, while consuming only 95 mW of power from a 1.2 V supply.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132949866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 16.2 Gbps 60 GHz SiGe transmitter for outdoor wireless links 用于室外无线链路的16.2 Gbps 60 GHz SiGe发射机
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508246
B. Sheinman, E. Bloch, N. Mazor, Run Levinger, R. Ben-Yishay, O. Katz, R. Carmon, A. Golberg, J. Vovnoboy, A. Bruetbart, M. Rachman, D. Elad
A fully integrated 60 GHz transmitter in 130 nm BiCMOS SiGe technology for outdoor applications is presented. The transmitter covers the entire 57-66 GHz band supporting a record data rate of 16.2 Gbps at 6 dBm output power, 512 QAM with an EVM of -34 dB. The single ended saturated power, OP1dB, and OIP3 are above 18 dBm, 16 dBm and 23 dBm respectively. The transmitter meets the most stringent ETSI emission mask for point-to-point communication at class6LB, 500 MHz bandwidth with an output noise floor below -133 dBm/Hz. The area of the transmitter is 15 mm2 and it consumes 1.2 W.
介绍了一种采用130纳米BiCMOS SiGe技术的完全集成60ghz发射器,用于户外应用。发射机覆盖整个57-66 GHz频段,在6 dBm输出功率下支持16.2 Gbps的创纪录数据速率,512 QAM, EVM为-34 dB。单端饱和功率、OP1dB和OIP3分别大于18dbm、16dbm和23dbm。发射机符合最严格的ETSI发射掩模,用于点对点通信,带宽为6lb, 500 MHz,输出本底噪声低于-133 dBm/Hz。发射机的面积为15mm2,功耗为1.2 W。
{"title":"A 16.2 Gbps 60 GHz SiGe transmitter for outdoor wireless links","authors":"B. Sheinman, E. Bloch, N. Mazor, Run Levinger, R. Ben-Yishay, O. Katz, R. Carmon, A. Golberg, J. Vovnoboy, A. Bruetbart, M. Rachman, D. Elad","doi":"10.1109/RFIC.2016.7508246","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508246","url":null,"abstract":"A fully integrated 60 GHz transmitter in 130 nm BiCMOS SiGe technology for outdoor applications is presented. The transmitter covers the entire 57-66 GHz band supporting a record data rate of 16.2 Gbps at 6 dBm output power, 512 QAM with an EVM of -34 dB. The single ended saturated power, OP1dB, and OIP3 are above 18 dBm, 16 dBm and 23 dBm respectively. The transmitter meets the most stringent ETSI emission mask for point-to-point communication at class6LB, 500 MHz bandwidth with an output noise floor below -133 dBm/Hz. The area of the transmitter is 15 mm2 and it consumes 1.2 W.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132699706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 4-phase blocker tolerant wideband receiver with MMSE harmonic rejection equalizer 带MMSE谐波抑制均衡器的4相容错宽带接收机
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508296
Esmail Babakrpur, W. Namgoong
This paper presents a blocker tolerant low-noise wideband receiver that employs digital harmonic rejection equalizer to suppress high order harmonic interferers. Unlike the commonly employed 8-phase harmonic rejection mixers (HRMs), the proposed wideband receiver suppresses any of the harmonic interferers including the seventh and ninth. The wideband receiver employs a two-path front-end structure, consisting of a highly linear mixer-first primary path and gm-first secondary path. An adaptive minimum mean-squared error (MMSE) harmonic rejection equalizer is employed that minimizes the desired signal distortion in the mean-squared error sense in the presence of arbitrary harmonic interferers and the correlated noise between the two paths. Using two sets of 4-phase clocks, a 100-1450MHz receiver that achieves HRR >75dB up to the ninth harmonic while being robust to mismatches is implemented.
本文提出了一种采用数字谐波抑制均衡器抑制高次谐波干扰的抗干扰低噪声宽带接收机。与常用的8相谐波抑制混频器(HRMs)不同,所提出的宽带接收器可以抑制包括第七和第九谐波干扰在内的任何谐波干扰。宽带接收机采用双路径前端结构,包括高度线性的混频器优先主路径和gm优先副路径。采用自适应最小均方误差(MMSE)谐波抑制均衡器,在存在任意谐波干扰和两个路径之间的相关噪声时,在均方误差意义上最小化期望的信号失真。采用两组4相时钟,实现了一种100-1450MHz的接收机,该接收机在九次谐波前的HRR >75dB,同时对失配具有鲁棒性。
{"title":"A 4-phase blocker tolerant wideband receiver with MMSE harmonic rejection equalizer","authors":"Esmail Babakrpur, W. Namgoong","doi":"10.1109/RFIC.2016.7508296","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508296","url":null,"abstract":"This paper presents a blocker tolerant low-noise wideband receiver that employs digital harmonic rejection equalizer to suppress high order harmonic interferers. Unlike the commonly employed 8-phase harmonic rejection mixers (HRMs), the proposed wideband receiver suppresses any of the harmonic interferers including the seventh and ninth. The wideband receiver employs a two-path front-end structure, consisting of a highly linear mixer-first primary path and gm-first secondary path. An adaptive minimum mean-squared error (MMSE) harmonic rejection equalizer is employed that minimizes the desired signal distortion in the mean-squared error sense in the presence of arbitrary harmonic interferers and the correlated noise between the two paths. Using two sets of 4-phase clocks, a 100-1450MHz receiver that achieves HRR >75dB up to the ninth harmonic while being robust to mismatches is implemented.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114305272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE 一个1瓦的ku波段功率放大器在SiGe, 37.5%的PAE
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508317
Ying Chen, M. van der Heijden, D. Leenaerts
This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.
本文演示了一种工作频率为13.5GHz至14.5GHz (ku波段)的1瓦输出功率放大器MMIC。功率放大器采用片上集成的16路同相输出电流合成器来实现所需的输出功率。该功率放大器采用0.25 μm SiGe:C BiCMOS技术,在14.1GHz时可实现37.5%的功率附加效率,在整个感兴趣的频段内可实现35.5%以上的功率附加效率。
{"title":"A 1-Watt Ku-band power amplifier in SiGe with 37.5% PAE","authors":"Ying Chen, M. van der Heijden, D. Leenaerts","doi":"10.1109/RFIC.2016.7508317","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508317","url":null,"abstract":"This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 28 nm, 475 mW, 0.4-to-1.7 GHz embedded transceiver front-end enabling high-speed data streaming within home cable networks 28纳米,475兆瓦,0.4至1.7 GHz嵌入式收发器前端,可在家庭有线网络中实现高速数据流
Pub Date : 2016-05-22 DOI: 10.1109/RFIC.2016.7508279
S. Spiridon, D. Koh, J. Xiao, M. Brandolini, B. Shen, C. Hsiao, H. Huang, D. Guermandi, S. Bozzola, H. Yan, M. Introini, L. Krishnan, K. Raviprakash, Y. Shin, R. Gomez, J. Chang
A 28 nm CMOS Software-Defined Transceiver (SDTRX) enabling High-Speed Data (HSD) streaming, including Ultra HD TV, within home cable networks is presented. By making efficient use of available cable bandwidth, the SDTRX dynamically handles up to 1024QAM OFDM-modulated HSD streams. This paper addresses SDTRX system-level design methodology as the key driver in enabling performance optimization for achieving a wide frequency range of operation at the lowest power and area consumption. By employing an optimized architecture constructed on available state-of-the art 28 nm functional building blocks, the monolithic SDTRX consists of a mixer-based harmonic rejection RX with a DAC-based TX and a smart PLL system. It operates over a 0.4-to-1.7 GHz frequency range while consuming less than 475 mW in half-duplex mode. Moreover, by developing a simple TX-RX loopback circuit, the system is enabled to efficiently calibrate TX output power and to remove the need for a dedicated external pin. This low-cost SDTRX is embedded in various 28 nm CMOS multimedia SoCs and is, to the authors' knowledge, the first reported transceiver front end to enable true high-speed data streaming within home cable networks.
提出了一种28纳米CMOS软件定义收发器(SDTRX),可在家庭有线网络中实现高速数据(HSD)流,包括超高清电视。通过有效地利用可用的电缆带宽,SDTRX动态处理高达1024QAM的ofdm调制HSD流。本文将SDTRX系统级设计方法作为实现性能优化的关键驱动因素,以最低的功耗和面积消耗实现宽频率范围的操作。通过采用基于现有最先进的28纳米功能构建模块的优化架构,单片SDTRX由基于混频器的谐波抑制RX和基于dac的TX和智能锁相环系统组成。它工作在0.4到1.7 GHz的频率范围内,在半双工模式下消耗小于475 mW。此外,通过开发一个简单的TX- rx环回电路,该系统能够有效地校准TX输出功率,并消除了对专用外部引脚的需求。这种低成本的SDTRX嵌入在各种28纳米CMOS多媒体soc中,据作者所知,这是第一个在家庭有线网络中实现真正高速数据流的收发器前端。
{"title":"A 28 nm, 475 mW, 0.4-to-1.7 GHz embedded transceiver front-end enabling high-speed data streaming within home cable networks","authors":"S. Spiridon, D. Koh, J. Xiao, M. Brandolini, B. Shen, C. Hsiao, H. Huang, D. Guermandi, S. Bozzola, H. Yan, M. Introini, L. Krishnan, K. Raviprakash, Y. Shin, R. Gomez, J. Chang","doi":"10.1109/RFIC.2016.7508279","DOIUrl":"https://doi.org/10.1109/RFIC.2016.7508279","url":null,"abstract":"A 28 nm CMOS Software-Defined Transceiver (SDTRX) enabling High-Speed Data (HSD) streaming, including Ultra HD TV, within home cable networks is presented. By making efficient use of available cable bandwidth, the SDTRX dynamically handles up to 1024QAM OFDM-modulated HSD streams. This paper addresses SDTRX system-level design methodology as the key driver in enabling performance optimization for achieving a wide frequency range of operation at the lowest power and area consumption. By employing an optimized architecture constructed on available state-of-the art 28 nm functional building blocks, the monolithic SDTRX consists of a mixer-based harmonic rejection RX with a DAC-based TX and a smart PLL system. It operates over a 0.4-to-1.7 GHz frequency range while consuming less than 475 mW in half-duplex mode. Moreover, by developing a simple TX-RX loopback circuit, the system is enabled to efficiently calibrate TX output power and to remove the need for a dedicated external pin. This low-cost SDTRX is embedded in various 28 nm CMOS multimedia SoCs and is, to the authors' knowledge, the first reported transceiver front end to enable true high-speed data streaming within home cable networks.","PeriodicalId":163595,"journal":{"name":"2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116481515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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