Asymmetric brightness of transparent organic emitting device with passivation layer by annealing

Chan-Jae Lee, D. Choi, Jeongno Lee
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Abstract

We studied transparent organic light emitting diode (TOLED) with semitransparent cathode, Ca-Ag and optical enhanced passivation layer by annealing. The 8-hydroxyquinolatolithium (Liq) passivation layer improves the stability of Ca/Ag double layer, resulting in substantial increase of the efficiency by the enhanced transmittance and change brightness as electrode. Fabricated device was composed as followed structure, glass/ITO/2TNATA/α-NPD/Alq3:C545T (1%)/Bebq2/Ca-Ag. The passivation layer, Liq (40nm) was deposited on the device without broken vacuum before encapsulation with transparent glass sheets. Thermal annealing was carried out in oven at 80oC after encapsulation. At the device without passivation layer, annealing process made device to be deteriorated, such as to increase driving voltage from 6.8 V to 9.0 V at 10 mA/cm2 and to drop efficiency 14.89 cd/A to 10.81 cd/A as bottom view. This drop of properties was caused by oxidation of cathode. However, the organic passivation layer played enough roles to protect oxidation of cathode. The efficiency as bottom side view of device with passivation layer, it can be observed that the efficiency and driving voltage were improved from 13.95 cd/A (@ 6.45 V) to 15.32 cd/A (@ 4.60 V) at 10 mA/cm2 by annealing. Annealing process, in the device with passivation layer, made to increase the asymmetry of brightness through anode and cathode. So the ratio BBot/BTop of the emitted light through each electrode was changed from 2.26 to 4.33.
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采用退火方法制备具有钝化层的透明有机发光器件的非对称亮度
本文研究了具有半透明阴极、Ca-Ag和光增强钝化层的透明有机发光二极管(TOLED)。8-羟基喹啉酸锂(Liq)钝化层提高了Ca/Ag双层的稳定性,通过提高透光率和改变电极亮度来大幅提高效率。制备的器件结构为:玻璃/ITO/2TNATA/α-NPD/Alq3:C545T (1%)/Bebq2/Ca-Ag。钝化层Liq (40nm)在不破真空的情况下沉积在器件上,然后用透明玻璃片封装。封装后在80℃的烘箱中进行热退火。在无钝化层的器件上,退火工艺使器件劣化,如驱动电压从6.8 V以10 mA/cm2的速度提高到9.0 V,效率从底图的14.89 cd/A下降到10.81 cd/A。性能的下降是由于阴极氧化引起的。而有机钝化层对阴极的氧化起到了足够的保护作用。从带钝化层器件的底面图可以看出,在10 mA/cm2时,效率和驱动电压从13.95 cd/A (@ 6.45 V)提高到15.32 cd/A (@ 4.60 V)。在带有钝化层的器件中进行退火处理,通过阳极和阴极增加亮度的不对称性。因此,每个电极发射光的BBot/BTop比值从2.26变化到4.33。
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