A 1–4 GHz low noise amplifier in 0.5-μm E-Mode InGaAs pHEMT technology

Hairui Song, Shu Yu, Yu-feng Guo, Shanwen Hu
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引用次数: 4

Abstract

This paper presents a 1–4 GHz low noise amplifier (LNA) for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20–23 dB, a noise figure of 1.8–2.3 dB during 1–4 GHz frequency range. The input S11 is −13dB∼-10dB and the output S22 is −18dB∼-10dB. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode InGaAs pHEMT Process and occupies 0.96 mm2 area. The power consumption is 250 mW with 5 V supply.
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一种采用0.5 μm E-Mode InGaAs pHEMT技术的1 - 4ghz低噪声放大器
提出了一种用于宽带通信系统的1 - 4ghz低噪声放大器。为了提高高频增益,提出了一种电容反馈增益补偿电路。在1-4 GHz频率范围内,LNA的电压增益为20-23 dB,噪声系数为1.8-2.3 dB。输入S11为−13dB ~ -10dB,输出S22为−18dB ~ -10dB。该电路采用门长为0.5 μm的E-Mode InGaAs pHEMT工艺实现,面积为0.96 mm2。功耗为250mw, 5v供电。
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