Temperature and devices dimension dependence on threshold voltage, the low field mobilty and the series parasitic resistance of PMOSFET

Abstract

This paper presents the temperature and devices dimension dependence on the threshold voltage, low field mobility and series parasitic resistance of PMOS over operating temperature range of 27 °C to 125 °C. The relation of IDS and VGS in linear region was used with a different of channel length and channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. The results show that, the temperature coefficient for threshold voltage is around 1.7mV/K approximately. The low field mobility degradation parameter is decreased by the factor of 0.68. The temperature coefficient of source-drain series resistance per unit channel width (RDSW) is approximately 16.7 ohm-um/K. These data are necessary not only should be compared with the results of NMOS but also should be used for the circuit designer to understanding well in the elevated operating temperatures.