F. Smith, A. Calawa, C. Chen, L. Mahoney, M. Manfra, J.C. Huang, F. Spooner
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引用次数: 4
Abstract
A new buffer layer has been developed that eliminates backgating in GaAs MESFET's and substantially reduces short-channel effects in GaAs MESFET's with 0.27-/spl mu/m-long gates. The new buffer is grown by molecular beam epitaxy at a substrate temperature of 200/spl deg/C using Ga and As/sub 4/ beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFET's with a gate length of 0.27 /spl mu/m that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer.
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