Compact Modeling for Double-Gate Junctionless MOSFET

Abstract

In this paper, a full range potential as well as current model is developed for the long channel and short channel double gate junctionless transistor, respectively. The Poisson’s equation and Pao-Sah’s double integral are used in the model derivation. Besides, the dynamic channel boundary is also taken into consideration in the short channel model to improve its accuracy. It shows that the model and simulation results are in good agreement over all operation regions for both kinds of devices. The new models provide a new reference for the circuit applications of double gate junctionless transistors in the future.